Title :
A VLSI-Suitable Schottky-Barrier CMOS Process
Author :
SWIRHUN, Stanley E. ; Sangiorgi, Enrico ; Weeks, Andrew J. ; Swanson, Richard M. ; Saraswat, Krishna C. ; Dutton, Robert W.
Abstract :
Trenched Schottky-barrier (TSB) contact PMOS devices for use in latchup-free CMOS are examined in detail, and compared to Schottky-contact PMOS. Measurements and simulations show that the TSB structure has significant advantages in gain and current leakage over the Schottky-contact structure, CMOS using TSB PMOS may be made unconditionally free of Iatchup. The tradeoffs involving PMOS source-drain implant dose are made explicit and correlated to Iatchup measurements.
Keywords :
CMOS integrated circuits; Integrated circuit technology; Schottky-barrier diodes; VLSI; CMOS process; CMOS technology; Circuits; Implants; Laboratories; MOS devices; Power supplies; Thyristors; Very large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052283
