Title :
A Submicrometer Megabit DRAM Process Technology Using Trench Capacitors
Author :
Nakajima, Shigeru ; Minegishi, Kazushige ; Miura, Kenji ; Morie, Takashi ; Kimizuka, Masakatsu ; Mano, Tsuneo
Abstract :
This paper describes guidelines for developing a 1-4-Mbit DRAM process, and device/process technologies for fabricating an experimental 1-Mbit DRAM. A single transistor cell combined with a trench capacitor and on-chip ECC technologies has the potential to realize a cell size of 10 /spl mu/m/sup 2/ without degrading soft error immunity. A depletion trench capacitor, submicrometer n-well CMOS process, Mo-poly gate, and sub-micrometer pattern formation technologies are developed, and an experimental 1-Mbit DRAM with a cell size of 20 /spl mu/m/sup 2/ is successfully developed by using these technologies.
Keywords :
CMOS integrated circuits; Integrated circuit technology; Random-access storage; VLSI; CMOS process; CMOS technology; Degradation; Error correction codes; Guidelines; MOS capacitors; MOSFET circuits; Paper technology; Random access memory; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052285
