Title :
Characteristics of MOSFET Prepared on Si/MgO /spl dot/ Al/sub 2/O/sub 3//SiO/sub 2//Si Structure
Author :
Hokari, Yasuaki ; Mikami, Masao ; Egami, Koji ; Tsuya, Hideki ; Kanamori, Masaru ; Hokari, Y. ; Mikami, Masashi ; Egami, K. ; Tsuya, H. ; Kanamori, Mitsuru
Abstract :
A new silicon on insulator (SOI) wafer with epitaxial-Si/ epitaxial-MgO/spl dot/Al/sub 2/O/sub 3/ (0.1 /spl mu/m)/SiO/sub 2/(0.5 /spl mu/m)/
Keywords :
Elemental semiconductors; Insulated gate field effect transistors; Large scale integration; Semiconductor epitaxial layers; Semiconductor technology; Silicon; Vapour phase epitaxial growth; Insulation; Laser beams; Leakage current; MOSFET circuits; P-n junctions; Parasitic capacitance; Semiconductor films; Silicon compounds; Silicon on insulator technology; Substrates;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052292
