Title :
Scaling Considerations and Dielectric Breakdown Improvement of a Corrugated Capacitor Cell for a Future dRAM
Author :
Sunami, Hideo ; Kure, Tokuo ; Yagi, Kunihiro ; Wada, Yasuo ; Yamaguchi, Ken ; Miyazawa, Hiroyuki ; Shimizu, Shinji
fDate :
2/1/1985 12:00:00 AM
Abstract :
Further scaling of a corrugated capacitor cell (CCC) consisting of a moat capacitor is discussed in terms of cell configuration device parameters. From the results of experimental analyses simulation, key parameters of cell scaling are suggested. In addition cell scalability, some improvements in dielectic breakdown of insulator are described. This insulator integrity is a key issue reliability of dRAM´s having a CCC.
Keywords :
Electric breakdown of solids; Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Random-access storage; Reliability; Semiconductor device models; VLSI; Capacitance; Capacitors; Circuit simulation; Degradation; Dielectric breakdown; Electric breakdown; Insulation; Scalability; Silicon; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052296
