DocumentCode
897748
Title
Scaling Considerations and Dielectric Breakdown Improvement of a Corrugated Capacitor Cell for a Future dRAM
Author
Sunami, Hideo ; Kure, Tokuo ; Yagi, Kunihiro ; Wada, Yasuo ; Yamaguchi, Ken ; Miyazawa, Hiroyuki ; Shimizu, Shinji
Volume
20
Issue
1
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
216
Lastpage
223
Abstract
Further scaling of a corrugated capacitor cell (CCC) consisting of a moat capacitor is discussed in terms of cell configuration device parameters. From the results of experimental analyses simulation, key parameters of cell scaling are suggested. In addition cell scalability, some improvements in dielectic breakdown of insulator are described. This insulator integrity is a key issue reliability of dRAM´s having a CCC.
Keywords
Electric breakdown of solids; Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Random-access storage; Reliability; Semiconductor device models; VLSI; Capacitance; Capacitors; Circuit simulation; Degradation; Dielectric breakdown; Electric breakdown; Insulation; Scalability; Silicon; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1985.1052296
Filename
1052296
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