Title :
Constraints on the Application of 0.5-μm MOSFET´s to ULSI Systems
Author :
Takeda, Eiji ; Jones, Geraint A C ; Ahmed, H.
fDate :
2/1/1985 12:00:00 AM
Abstract :
The characteristics of a MOSFET with an Leff= 0.5μ. which is a building element of the next generation of ULSI\´s,are described from two viewpoints 1) "deviation" from the scaling law and 2) "system level scaling" and are compared with those of 1.3-, 2-, and 3-μm design rules. In the light of the fact that further improvements in the characteristics of small-sized devices are diminishing, it is mentioned that from now on it will be more necessary to concentrate on the system-oriented approach, rather than device and process technologies. In addition, to aid the selection of a new standard for power supply voltage, the allowable operating bias regions in 0.5-μm devices are discussed.
Keywords :
Field effect integrated circuits; Insulated gate field effect transistors; Semiconductor device models; VLSI; Conductivity; Electron beams; Integrated circuit interconnections; Lithography; MOSFET circuits; Power supplies; Transistors; Ultra large scale integration; Very large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052299
