DocumentCode :
897801
Title :
In(Ga)As Quantum Ring Terahertz Photodetector With Cutoff Wavelength at 175 
m
Author :
Lee, Jheng-Han ; Dai, Jong-Horng ; Chan, Chi-Feng ; Lee, Si-Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
21
Issue :
11
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
721
Lastpage :
723
Abstract :
An InAs-GaAs quantum ring infrared photodetector has been fabricated successfully. The photodetector demonstrates a cutoff wavelength at 175 mum (1.7 THz) and the detectivity of 1.3times107 cm Hz1/2/W at 80 K. The precise control of the In(Ga)As ring height by capping GaAs layer thickness is responsible for extension of the detector response to terahertz range.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; optical fabrication; optical materials; photodetectors; semiconductor devices; terahertz wave detectors; GaAs; InAs-GaAs; frequency 1.7 THz; quantum ring infrared photodetector fabrication; quantum ring terahertz photodetector; temperature 80 K; wavelength 175 mum; Annealing; Epitaxial growth; Frequency; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Substrates; Temperature; Infrared detectors; photodetectors; quantum dots (QDs); quantum rings (QRs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2017276
Filename :
4939383
Link To Document :
