DocumentCode :
897816
Title :
Low-index embedded waveguide lenses in GaAs substrates
Author :
Lee, Chin C. ; Minot, Mark M.
Author_Institution :
Dept. of Electr. Eng., California Univ., Irvine, CA, USA
Volume :
1
Issue :
10
fYear :
1989
Firstpage :
313
Lastpage :
315
Abstract :
An integrated optical lens structure which embeds a low-index waveguide lens region in a high-index host waveguide is discussed. The lens has been realized on a GaAs/GaAlAs waveguide using an embedded low-index lens structure of glass/SiO/sub 2/. At an f-number of 2 and a wavelength of 1.152 mu m, the focal spot size is 2.8 mu m. The throughput efficiency is 45% and the angular field of view is 10 degrees .<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; lenses; optical waveguide components; 1.152 micron; 45 percent; GaAs substrates; GaAs-GaAlAs waveguide; III-V semiconductors; SiO/sub 2/; angular field of view; f-number; focal spot size; integrated optical lens structure; low index embedded waveguide lenses; throughput efficiency; wavelength; Gallium arsenide; Glass; Integrated optics; Lenses; Optical films; Optical materials; Optical signal processing; Optical waveguides; Reflection; Substrates;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.43359
Filename :
43359
Link To Document :
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