Title :
Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
Author :
Hu, Chenming ; Tam, Simon C. ; Hsu, Fu-Chieh ; Ko, Ping-Keung ; Chan, Tung-Yi ; Terrill, Kyle W.
Abstract :
Evidence suggests that MOSFET degradation is due to interface-states generation by electrons having 3.7 eV and higher energies. This critical energy and the observed time dependence is explained with a physical model involving the breaking of the = Si/sub s/H bonds. The device lifetime /spl tau/ is proportional to...
Keywords :
Hot carriers; Insulated gate field effect transistors; Semiconductor device models; Charge carrier processes; Degradation; Dielectrics; Electron emission; Electron traps; Hot carriers; Interface states; MOSFET circuits; Monitoring; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052306
