DocumentCode
897935
Title
Gain-Bandwidth Optimization of Avalanche-Diode Amplifiers
Author
Ku, Walter H. ; Scherer, Ernst F.
Volume
18
Issue
11
fYear
1970
fDate
11/1/1970 12:00:00 AM
Firstpage
932
Lastpage
942
Abstract
This paper contains both theoretical and experimental results on the gain-bandwidth optimization of avalanche-diode amplifiers. These comprise a class of reflection-type negative-resistance amplifiers using avalanche diodes operating in the IMPATT or normal avalanche mode. Theoretical results on gain-bandwidth optimization are derived using various equivalent-circuit models for the IMPATT diode. These results form the basis for a design theory for broad-band avalanche-diode amplifiers. The basic model of the IMPATT diode is that of a band-limited negative-resistance device. Explicit gain-bandwidth limitations are presented in this paper for classes of modified Butterworth- and Chebyshev-amplifier responses. This is then followed by a description of experimental results on broad-band avalanche-diode amplifiers.
Keywords
Admittance; Chebyshev approximation; Equivalent circuits; High power amplifiers; Impedance; Microwave amplifiers; Microwave frequencies; Monitoring; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1970.1127372
Filename
1127372
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