DocumentCode :
897959
Title :
Stability and SER Analysis of Static RAM Cells
Author :
Chappell, Barbara ; Schuster, Stanley E. ; Sai-halasz, George A.
Volume :
20
Issue :
1
fYear :
1985
fDate :
2/1/1985 12:00:00 AM
Firstpage :
383
Lastpage :
390
Abstract :
Graphical techniques for analysis of the stability and soft error rate (SER) of static RAM cells have been developed. These techniques include important transient effects and make readily visible the impact of variations in design approaches and parametric. The techniques are illustrated with application to a high-speed 64K NMOS RAM and comparative cases. The stability and SER is sized for these cases as a function of design and parametric variations in timing approaches, device sizes, threshold mismatches, load resistors, and usage statistics. These variations can result in orders of magnitude variation in SER. Nevertheless, with careful design, 64K NMOS RAM cells can have reasonable stability and SER. Even if load resistors are not used, these SER can be much lower than might be expected by simple analogy to a one-device dynamic RAM cell with the same size storage capacitor.
Keywords :
Alpha-particle effects; Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Random-access storage; Reliability; Stability; VLSI; Circuit simulation; Circuit stability; DRAM chips; Error analysis; MOS devices; Parametric statistics; Resistors; Stability analysis; Transient analysis; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1985.1052318
Filename :
1052318
Link To Document :
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