DocumentCode
898004
Title
Quantum confinement and charge control in deep mesa etched quantum wire devices
Author
Jovanovic, Dejan ; Leburton, Jean-Pierre
Author_Institution
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
Volume
14
Issue
1
fYear
1993
Firstpage
7
Lastpage
9
Abstract
Novel aspects of charge confinement in quantum wires are investigated with a self-consistent Schrodinger-Poisson model in the high-temperature regime. A decreasing eigenenergy separation with gate bias is revealed which differs from the behavior observed in 2-D devices. In addition, charge control is examined and an analytical approximation relating charge density to gate bias is obtained.<>
Keywords
nanotechnology; semiconductor device models; semiconductor quantum wires; 1D devices; analytical approximation; charge confinement; charge control; charge density; decreasing eigenenergy separation; deep mesa etched quantum wire devices; gate bias; high-temperature regime; quantum wires; self-consistent Schrodinger-Poisson model; Character recognition; Doping; Etching; Gallium arsenide; Poisson equations; Potential well; Schottky barriers; Schrodinger equation; Temperature; Wire;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.215083
Filename
215083
Link To Document