Title :
Fast Programmable 256K Read Only Memory with On-Chip Test Circuits
Author :
Atsumi, Shigeru ; Tanaka, Sumio ; Shinada, Kazuyoshi ; Yoshikawa, Kuniyoshi ; Makita, Kohji ; Nagakubo, Yoshihide ; Kanzaki, Koichi
fDate :
2/1/1985 12:00:00 AM
Abstract :
A 32K X 8 bits EPROM which satisfies all requirements for a high-density EPROM, has been developed. The fast programming time is achieved by introducing a DSA structure into the memory cell. The low power consumption and fast access time are realized by utilizing n-well CMOS peripheral circuits. Various test circuits are implemented to alleviate lengthy screening time. Typical programming time, access time, and power dissipation are 3μbyte, 100 ns, and 5 mA, respectively.
Keywords :
CMOS integrated circuits; Integrated circuit technology; Integrated circuit testing; Integrated memory circuits; PROM; VLSI; Aluminum; CMOS memory circuits; CMOS technology; Circuit testing; EPROM; Energy consumption; PROM; Power dissipation; Read only memory; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052324
