DocumentCode
898019
Title
Fast Programmable 256K Read Only Memory with On-Chip Test Circuits
Author
Atsumi, Shigeru ; Tanaka, Sumio ; Shinada, Kazuyoshi ; Yoshikawa, Kuniyoshi ; Makita, Kohji ; Nagakubo, Yoshihide ; Kanzaki, Koichi
Volume
20
Issue
1
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
422
Lastpage
427
Abstract
A 32K X 8 bits EPROM which satisfies all requirements for a high-density EPROM, has been developed. The fast programming time is achieved by introducing a DSA structure into the memory cell. The low power consumption and fast access time are realized by utilizing n-well CMOS peripheral circuits. Various test circuits are implemented to alleviate lengthy screening time. Typical programming time, access time, and power dissipation are 3μbyte, 100 ns, and 5 mA, respectively.
Keywords
CMOS integrated circuits; Integrated circuit technology; Integrated circuit testing; Integrated memory circuits; PROM; VLSI; Aluminum; CMOS memory circuits; CMOS technology; Circuit testing; EPROM; Energy consumption; PROM; Power dissipation; Read only memory; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1985.1052324
Filename
1052324
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