DocumentCode :
898025
Title :
Characteristics of MOS-controlled thyristors under zero voltage soft-switching conditions
Author :
De Doncker, Rik W A A ; Jahns, Thomas M. ; Radun, Arthur V. ; Watrous, Donald L. ; Temple, Victor A K
Author_Institution :
Gen. Electr. Co., Schenectady, NY, USA
Volume :
28
Issue :
2
fYear :
1992
Firstpage :
387
Lastpage :
394
Abstract :
During the development of new MOS-controlled thyristors (MCTs), considerable effort has been spent to evaluate and enhance the dynamic performance of MCTs under zero-voltage soft-switching conditions encountered in several resonant converter configurations. The authors summarize key MCT characterization results as they relate to their dynamic performance during zero-voltage switching. Furthermore, a test circuit that enables characterization of the zero-voltage turn-on and turn-off switching losses of the device is proposed. Behavior models are proposed and evaluated to predict the MCT turn-off losses under various soft-switching conditions. These models are useful for both the circuit designer and the device designer in order to optimize device performance in high-frequency, soft-switching converters
Keywords :
losses; metal-insulator-semiconductor devices; power convertors; switching; thyristors; MOS-controlled thyristors; MOSFET; dynamic performance; high-frequency; resonant converter; soft-switching converters; test circuit; turn-off switching losses; turn-on switching losses; zero voltage soft-switching; Circuit testing; Industry Applications Society; Insulated gate bipolar transistors; MOSFETs; Resonance; Switching circuits; Switching converters; Switching loss; Thyristors; Zero voltage switching;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/28.126747
Filename :
126747
Link To Document :
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