Title :
Uncooled low-voltage AlGaAsSb/InGaAsSb/GaSb avalanche photodetectors
Author :
Sulima, O.V. ; Mauk, M.G. ; Shellenbarger, Z.A. ; Cox, J.A. ; Li, J.V. ; Sims, P.E. ; Datta, S. ; Rafol, S.B.
Author_Institution :
AstroPower Inc., Newark, DE, USA
Abstract :
Low-voltage AlGaAsSb/InGaAsSb/GaSb separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as InGaAsSb/GaSb APDs with an AlGaAsSb passivating layer, are fabricated using liquid phase epitaxy. Formation of the p-n junction is performed either epitaxially or through diffusion of Zn from the vapour phase. Responsivity as high as 43 A/W at wavelength of 2100 nm is achieved at room temperature in AlGaAsSb/InGaAsSb/GaSb SAM-APDs reverse biased at 6.7 V. Relatively high responsivity (8.9 A/W at 2000 nm) was also measured in an InGaAsSb/GaSb APD reverse biased at 7.5 V.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical fabrication; p-n junctions; passivation; photodetectors; surface diffusion; vapour phase epitaxial growth; zinc; 2000 nm; 2100 nm; 293 to 298 K; 6.7 V; 7.5 V; AlGaAsSb-InGaAsSb-GaSb; Zn; Zn diffusion; avalanche photodetectors; fabrication; liquid phase epitaxy; multiplication avalanche photodiodes; p-n junction formation; passivating layer; responsivity; separate absorption; uncooled low-voltage AlGaAsSb/InGaAsSb/GaSb; vapour phase;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20040142
