Quarter-micrometer low-noise pseudomorphic GaAs HEMTs with extremely low dependence of the noise figure on drain-source current

Author

Wenger, J.

Author_Institution

Daimler-Benz AG Res. Center, Ulm, Germany

Volume

14

Issue

1

fYear

1993

Firstpage

16

Lastpage

18

Abstract

Quarter-micrometer pseudomorphic (PM) AlGaAs-InGaAs-GaAs HEMTs with an In mole fraction of 21% have been successfully developed, fabricated, and characterized. The devices are realized in a commercial technology by using a multiple-gate-finger layout with air bridges for the interconnection of the source pads and a Si/sub 3/N/sub 4/ passivation. PM HEMTs with a gate width of 6*20 mu m exhibit state-of-the-art noise figures of 0.65 and 0.82 dB with an associated gain of 14.5 and 11.5 dB at 12 and 18 GHz, respectively. The noise figure shows the lowest dependence on the drain-source current yet reported with Delta F/sub max/<0.12 dB for a wide biasing range from 25% I/sub dss/ up to 150% I/sub dss/ at 12 GHz when I/sub dss/=170-250 mA/mm.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; passivation; semiconductor device noise; silicon compounds; solid-state microwave devices; 0.25 micron; 0.65 dB; 0.82 dB; 11.5 dB; 12 GHz; 14.5 dB; 18 GHz; 20 micron; AlGaAs-InGaAs-GaAs; Si/sub 3/N/sub 4/ passivation; air bridges; drain-source current; gain; gate width; low dependence on current; multiple-gate-finger layout; noise figure; semiconductors; Bridges; Fabrication; Frequency; Gallium arsenide; HEMTs; Integrated circuit technology; Intrusion detection; MODFETs; Molecular beam epitaxial growth; Noise figure;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215086

Filename

215086