Title :
Silicon Avalanche-Diode Microstrip L-Band Oscillator (Correspondence)
Author :
Rosen, Arye ; Assour, J.
fDate :
11/1/1970 12:00:00 AM
Abstract :
A metal ceramic microstrip oscillator circuit using high-efficiency silicon avalanche diodes mounted in capacitively loaded transverse-electromagnetic (TEM) coupled lines is described. The physical dimensions of the oscillator circuit are 1.5 by 1.0 by 0.5 inches high. Results achieved at L-band are 105 watts peak output at 1.5 GHz with 13-percent efficiency.
Keywords :
Breakdown voltage; Circuits; Diodes; Filters; Impedance; L-band; Microstrip; Oscillators; Radio frequency; Silicon;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1970.1127383
