A high-performance lateral bipolar transistor fabricated on SIMOX

Author

Parke, Stephen A. ; Hu, Chenming ; Ko, Ping K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

14

Issue

1

fYear

1993

Firstpage

33

Lastpage

35

Abstract

Double-diffused, lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates. Excellent device characteristics were achieved, with peak h/sub FE/=120, BV/sub CEO/=10 V, and peak f/sub t/=4.5 GHz. The f/sub t/ versus BV/sub CEO/ trade-off was studied as a function of n/sup -/ collector width. f/sub t/>25 GHz is predicted for this structure with an improved device layout and optimized basewidth. This process may be easily extended in order to fabricate complementary BJTs in a C-BiCMOS thin-film SOI technology.<>

Keywords

BiCMOS integrated circuits; SIMOX; bipolar transistors; integrated circuit technology; 10 V; 4.5 GHz; C-BiCMOS thin-film SOI technology; CMOS-like process; SIMOX; SOI substrates; complementary BJTs; device characteristics; device layout; double diffused transistors; lateral bipolar transistor; n-p-n bipolar transistors; optimized basewidth; trade-off; BiCMOS integrated circuits; Bipolar transistors; Boron; CMOS process; CMOS technology; Implants; Semiconductor thin films; Silicon on insulator technology; Substrates; Thin film devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215091

Filename

215091