Combined effects of hot-carrier stressing and ionizing radiation in SiO/sub 2/, NO, and ONO MOSFETs

Author

Das, N.C. ; Nathan, V. ; Dacus, S. ; Cable, James

Author_Institution

Phillips Lab./VTRS, Kirtland AFB, NM, USA

Volume

14

Issue

1

fYear

1993

Firstpage

40

Lastpage

42

Abstract

N-channel MOSFETs with different gate dielectrics, such as silicon dioxide, silicon dioxide annealed in nitrous oxide (NO), and reoxidized nitrided oxide (ONO), were first hot-carrier (HC) stressed and then irradiated to a total dose of 1.5 Mrd. For equal substrate current stressing NO devices have the least degradation, whereas the threshold voltage (V/sub t/) shift due to irradiation is maximum for these devices. For all three types of gate dielectrics the V/sub t/ shift due to irradiation of HC stressed devices was higher than that of the unstressed device. However, for ONO devices the V/sub t/ shift due to irradiation of the hot-electron stressed (stressing with V/sub d/=V/sub g/=6.5 V) device was less than that of the unstressed device.<>

Keywords

X-ray effects; dielectric thin films; hot carriers; insulated gate field effect transistors; radiation hardening (electronics); reliability; 1.5 Mrad; 6.5 V; NO MOSFETs; ONO MOSFETs; Si/sub x/O/sub y/N/sub z/ gate; SiO/sub 2/ MOSFETs; SiO/sub 2/ gate; gate dielectrics; hot electrons; hot-carrier stressing; ionizing radiation; n-channel MOSFETs; nitrided oxide; reoxidized nitrided oxide; substrate current stressing; threshold; threshold voltage shift; Annealing; Degradation; Dielectric devices; Dielectric substrates; Hot carrier effects; Hot carriers; Ionizing radiation; MOSFETs; Silicon compounds; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215093

Filename

215093