Title :
Static and dynamic behavior of paralleled IGBTs
Author_Institution :
SGS-Thomson Microelectron., Catania, Italy
Abstract :
Problems associated with power device characteristics when power devices are connected in parallel, such as thermal stability and balanced switching behavior, can be solved by using insulated gate bipolar transistors (IGBTs). The author deals with parallel IGBT behaviors analyzing both static and dynamic characteristics. The influence of heatsink mounting, layout, and drive circuit are described in order to demonstrate the best way to make IGBTs parallel for optimum performance. In addition, the major advantages of the ISOTOP package are shown
Keywords :
driver circuits; heat sinks; insulated gate bipolar transistors; switching; thermal analysis; ISOTOP package; balanced switching behavior; drive circuit; dynamic behavior; heatsink mounting; insulated gate bipolar transistors; parallel IGBT; static behaviour; thermal stability; Circuit stability; Current density; Extrapolation; Industry Applications Society; Insulated gate bipolar transistors; Packaging; Power dissipation; Switching loss; Temperature; Thermal stability;
Journal_Title :
Industry Applications, IEEE Transactions on
