A New Technique for the Characterization of Microwave Avalanche Diodes

Sample theoretical arguments are used to show that at low current densities the negative-resistance properties of a packaged avalanche diode may be represented by only three parameters. These three parameters may be easily measured with the diode in a nonoscillating state. Once these parameters have been measured for a diode, its oscillator performance can be predicted for any well-defined circuit with an accuracy of about 10 percent. An example characterization of a diode is described, and the predicted and experiments performances of this diode when used in an oscillator circuit are then compared.