Title :
InP/InGaAsP double-heterostructure optoelectronic switch
Author :
Kovacic, S.J. ; Robinson, B.J. ; Simmons, John G. ; Thompson, D.A.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The functional characteristics and operational parameters exhibit a lower switching voltage ( approximately=1.8 V) and a higher on-state holding current ( approximately=20 mA) than found in either the Si/SiGe- or GaAs/AlGaAs-based DOES of comparable structures and doping levels. In the on-state, optical emission is observed in a manner analogous to a light emitting diode. However, enhanced optical emission is observed when the device is biased in the regime of negative differential resistance.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; luminescent devices; negative resistance; optical switches; semiconductor switches; 1.3 micron; 1.8 V; 20 mA; III-V semiconductor; InP-InGaAsP switch; double-heterostructure optoelectronic switch; enhanced optical emission; functional characteristics; negative differential resistance; on-state holding current; operational parameters; switching voltage; Contacts; Gallium arsenide; Indium phosphide; Lattices; Light emitting diodes; Silver; Stimulated emission; Substrates; Switches; Temperature;
Journal_Title :
Electron Device Letters, IEEE
