DocumentCode
898180
Title
High-Power Gunn Oscillator Diodes on Type-IIa Diamond Heat Sinks
Author
Migitaka, M. ; Miyazaki, Moriyasu ; Saito, Kazuyuki
Volume
18
Issue
11
fYear
1970
fDate
11/1/1970 12:00:00 AM
Firstpage
1004
Lastpage
1005
Abstract
Gallium arsenide Gunn diodes were mounted on a type-IIa diamond to reduce the thermal spreading resistance just under the wafer of the diodes. By using the diamond, the total thermal resistance of the diodes was reduced to half the usual resistance. A single-wafer Gunn diode on the type-IIa diamond produced 910 mW at 9.9 GHz with an efficiency of 3.1 percent.
Keywords
Gold; Gunn devices; Heat sinks; Injection-locked oscillators; Microwave oscillators; Resistance heating; Semiconductor diodes; Temperature; Thermal conductivity; Thermal resistance;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1970.1127396
Filename
1127396
Link To Document