High-speed p/sup +/ GaInAs-n InP heterojunction JFET´s (HJFET´s) grown by MOCVD

Author

Hashemi, Majid M. ; Shealy, J.B. ; DenBaars, Steve P. ; Mishra, Umesh K.

Author_Institution

California Univ., Santa Barbara, CA, USA

Volume

14

Issue

2

fYear

1993

Firstpage

60

Lastpage

62

Abstract

The authors report the high-frequency characteristics of a new type of InP-JFET having p/sup +/ GaInAs as the gate material grown by MOCVD (metalorganic chemical vapor deposition) using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) as the alternative source for phosphine and arsine, respectively. Using selective wet chemical etching, heterojunction JFETs (HJFETs) with gate length of 0.6 mu m led to a unity current gain cutoff frequency and power gain cutoff frequency of 14.3 and 37.5 GHz, respectively. The large valence band discontinuity ( triangle E/sub v/ approximately=0.37 eV) considerably suppresses hole injection into the channel in the HJFET as compared to homojunction InP-JFETs, making the HJFET a preferred device for high-speed logic circuits based on JFET technology.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 14.3 GHz; 37.5 GHz; GaInAs-InP heterojunction; HJFET; III-V semiconductor; MOCVD; current gain cutoff frequency; high-frequency characteristics; high-speed logic circuits; large valence band discontinuity; p/sup +/-n heterojunction; power gain cutoff frequency; selective wet chemical etching; Chemicals; Cutoff frequency; Fabrication; Heterojunctions; Indium phosphide; Logic circuits; MOCVD; Radio frequency; Thermal conductivity; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215108

Filename

215108