Generator for a custom statistical bipolar transistor model

An automated model generator (MG) has been developed for a rectangular bipolar device with arbitrary and nonsymmetrical separations of rectangular regions around the emitter perimeter. The MG provides a transistor equivalent circuit whose parameters are determined using a distributed network representing a three-dimensional transistor configuration. The network accounts for nonlinear device dependencies associated with horizontal layout and process technologies. The elements of the distributed network are simple units whose parameters ar derived from measurements or two-dimensional process and device simulations. The MG is versatile and offers several photolithography and processing technology options, with recessed oxide or oxide-nitride defined standard or polysilicon-type base. The resulting lumped-equivalent circuit is used, along with related models of other transistors or device types, for statistical analysis computations of various circuit configurations at different operating temperatures.