Spatial distributions of thin oxide charging in reactive ion etcher and MERIE etcher

Author

Shin, Hyungcheol ; Noguchi, Ko ; Qian, Xue-Yu ; Jha, Neeta ; Hills, Graham ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

14

Issue

2

fYear

1993

Firstpage

88

Lastpage

90

Abstract

The spatial variation of the oxide charging across a wafer in a magnetically enhanced reactive ion etcher (MERIE) was investigated and compared with that in a reactive ion etcher (RIE). The polarity as well as the magnitude of the oxide charging current were determined by evaluating quasi-static CV curves for MOS capacitors. In a MERIE etcher with a static magnetic field, oxide charging is negative for about half of the wafer and positive for the other half of the wafer. A model is proposed to explain how lateral magnetic field affects the spatial distribution of charging across the wafer in a MERIE etcher.<>

Keywords

metal-insulator-semiconductor devices; semiconductor process modelling; sputter etching; static electrification; MOS capacitors; charging current; lateral magnetic field; magnetically enhanced reactive ion etcher; model; oxide charging; polarity; quasi-static CV curves; reactive ion etcher; spatial variation; wafer; Aluminum; Laboratories; MOS capacitors; Magnetic fields; Magnetic flux; Magnetic flux density; Plasma applications; Plasma density; Testing; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215117

Filename

215117