Carrier transit delays in nanometer-scale GaAs MESFET´s

Author

Adams, J.A. ; Thayne, I.G. ; Beaumont, Steven P. ; Wilkinson, C.D.W. ; Johnson, N.P. ; Kean, A.H. ; Stanley, C.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

14

Issue

2

fYear

1993

Firstpage

85

Lastpage

87

Abstract

MESFETs with gate lengths in the range of 40 to 300 nm with GaAs and AlGaAs buffer layers were characterized by high-frequency transit-time measurements. The total carrier transit time is interpreted as being composed of an intrinsic part, a drain delay, and a channel charging delay. The drain field´s effect on the geometry of the gate depletion region, and the injection of carriers into the buffer layer are used to describe the origin of these delays and their limiting effect on the high-frequency performance of sub-0.1- mu m gate-length MESFETs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; nanotechnology; 40 to 300 nm; GaAs devices; III-V semiconductor; carrier transit delays; channel charging delay; drain delay; high-frequency transit-time measurements; intrinsic part; nanometer-scale MESFET; short-channel effects; Buffer layers; Capacitance; Cutoff frequency; Delay effects; Gallium arsenide; Geometry; Length measurement; MESFETs; Nanoelectronics; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215121

Filename

215121