Title :
Metal base transistor of In/Bi(Ba,Rb)O/sub 3//SrTiO/sub 3/ (Nb)
Author :
Abe, Hitoshi ; Toda, Fumihiko ; Ogiwara, Mitsuhiko
Author_Institution :
Oki Electric Industry Ltd., Tokyo, Japan
fDate :
3/1/1993 12:00:00 AM
Abstract :
A metal-base transistor of the MOMOM type with large current gain is reported. It uses Bi(Ba,Rb)O/sub 3/ and oxide semiconductors. I-V curves for a Bi(Ba,Rb)O/sub 3/ base transistor in the common-base configuration were studied from room temperature to 30 K. Current gain alpha approximately 1 was obtained at 50 K. Transport behavior is determined by analysis of threshold voltages and derivatives dI/sub c//dV/sub cb/.<>
Keywords :
barium compounds; bipolar transistors; bismuth compounds; indium; metal-insulator-metal devices; niobium; rubidium compounds; semiconductor materials; strontium compounds; 30 to 273 K; I-V curves; In-BaBaRbO/sub 3/-SrTiO/sub 3/:Nb; MOMOM type; common-base configuration; metal-base transistor; oxide semiconductors; threshold voltages; Electrodes; Gold; Indium; Niobium; Optical reflection; Schottky diodes; Semiconductor diodes; Substrates; Superconducting films; Temperature;
Journal_Title :
Electron Device Letters, IEEE
