Dead-space effects under near-breakdown conditions in AlGaAs/GaAs HBT´s

Author

Carlo, A. Di ; Lugli, P.

Author_Institution

Schottky Inst. & Phys. Dept., Tech. Univ. Munchen, Germany

Volume

14

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

103

Lastpage

106

Abstract

By using a self-consistent Monte Carlo simulation, the authors demonstrate the importance of dead-space effects in the near-avalanche regime of AlGaAs/GaAs HBTs. They show that the space-dependent ionization coefficient reaches its maximum inside the collector region, displaced by several hundred angstroms from the peak electric field at the collector-base junction, and from the maximum of the carrier average energy. A delay equation is proposed that overcomes the failure of local models in describing such effects.<>

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; impact ionisation; semiconductor device models; AlGaAs-GaAs; Monte Carlo simulation; collector region; dead-space effects; delay equation; models; near-avalanche regime; near-breakdown conditions; space-dependent ionization coefficient; Analytical models; Boltzmann equation; Charge carrier processes; Delay effects; Gallium arsenide; Heterojunction bipolar transistors; High definition video; Hot carriers; Impact ionization; Semiconductor devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215125

Filename

215125