Title :
A new negative resistance of semiconductor bulk
Author :
Kawamura, Mitsuhiro ; Morishita, S.
fDate :
7/1/1968 12:00:00 AM
Abstract :
An analysis is presented of a new negative resistance that appears when the drift velocity of carriers exceeds the thermal velocity in the ordinary element semiconductor bulk. The theory may offer one explanation for a new current instability recently discovered [1].
Keywords :
Ash; Boundary conditions; Current density; Electron mobility; Frequency; Impedance; Poisson equations; Propagation constant; Space charge; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6521
