Title :
Low-noise silicon carbide X-ray sensor with wide operating temperature range
Author :
Bertuccio, G. ; Casiraghi, R. ; Cetronio, A. ; Lanzieri, C. ; Nava, F.
Author_Institution :
Dept. of Electron. Eng. & Inf. Sci., Politecnico di Milano, Italy
Abstract :
A silicon carbide (SiC) sensor is presented with high energy resolution in X-ray spectroscopy over a wide temperature range (27-100°C). The sensor, consisting of a Schottky barrier diode on high resistivity epitaxial SiC, is characterised by an extremely low noise due to its ultra-low reverse current density even at high operating temperature (15 pA/cm2 at 27°C and 0.5 nA/cm2 at 100°C). Equivalent noise charges as low as 17 electrons rms at 27°C and 47 electrons rms at 100°C have been measured, allowing X-ray spectroscopy with an energy resolution as low as 315 eV and 797 eV FWHM, respectively.
Keywords :
Schottky diodes; X-ray detection; X-ray spectroscopy; semiconductor device noise; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 27 to 100 degC; Schottky barrier diode; SiC; X-ray spectroscopy; high energy resolution; low noise silicon carbide X-ray sensor; ultra low reverse current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040126
