Title :
On the geometric component of charge-pumping current in MOSFETs
Author :
Van den Bosch, Geert ; Groeseneken, Guido ; Maes, Herman E.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
3/1/1993 12:00:00 AM
Abstract :
A simple method of unambiguously determining the presence of any geometric component in a charge-pumping measurement by collecting this component at another node via a nearby junction is presented. With the method it has been possible to study the dependence of geometric components on device dimensions and various experimental conditions with unprecedented sensitivity. By effectively separating the two current contributions, this method can at the same time be used to reduce geometric components in the regular charge-pumping signal, thereby increasing the accuracy of the various implementations of the charge pumping (CP) technique.<>
Keywords :
insulated gate field effect transistors; minority carriers; charge-pumping current; device dimensions; geometric component; lateral drift/diffusion phase; vertical diffusion phase; Capacitance; Charge carrier density; Charge pumps; Current measurement; Electron mobility; Electrostatics; MOSFET circuits; Thyristors; Visualization;
Journal_Title :
Electron Device Letters, IEEE
