Title :
Group velocity dependence of propagation losses in single-line-defect photonic crystal waveguides on GaAs membranes
Author :
Tanaka, Y. ; Sugimoto, Y. ; Ikeda, N. ; Nakamura, H. ; Asakawa, K. ; Inoue, K. ; Johnson, S.G.
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
Group velocity, vg, dependence of propagation loss in single-line-defect photonic crystal waveguides on GaAs membranes, and minimum loss as low as 2.5 dB/mm, are presented. When vg is reduced by a factor of 7, an additional loss is found to be only 5 dB/mm, thus proving a feasible usage of low vg.
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; molecular beam epitaxial growth; optical waveguides; photonic crystals; semiconductor epitaxial layers; semiconductor growth; sputter etching; wave propagation; AlGaAs; GaAs; GaAs membranes; aluminium compounds; electron beam lithography; group velocity dependence; molecular beam epitaxial growth; photonic crystal waveguides; propagation loss; single line defect waveguides; sputter etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040114
