Title :
Beam Lead Tunnel Diode Amplifiers on Microstrip
fDate :
12/1/1970 12:00:00 AM
Abstract :
The characteristics of beam lead tunnel diodes and their application in low-cost microstrip reflection amplifiers are discussed. Three low-noise C-band amplifiers are described, including one with the amplifier printed directly on a garnet substrate with a three-port Y-junction circulator.
Keywords :
Electric variables; Fabrication; Garnets; Low-noise amplifiers; Microstrip; Microwave technology; Optical reflection; Semiconductor device packaging; Semiconductor diodes; Structural beams;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1970.1127414
