Title :
1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
Author :
Liu, P.-W. ; Liao, G.-H. ; Lin, H.-H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 μm pulsed operation with a low threshold current density of 300 A/cm2. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.
Keywords :
Auger effect; III-V semiconductors; current density; gallium arsenide; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; spontaneous emission; 1.292 micron; 1.3 micron; Auger recombination component; GaAs (100) substrate; GaAs-GaAsSb; GaAs-GaAsSb quantum well laser; GaAs/GaAs0.64Sb0.36; low threshold current density; solid source molecular beam epitaxy; spontaneous emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040119
