• DocumentCode
    898382
  • Title

    1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy

  • Author

    Liu, P.-W. ; Liao, G.-H. ; Lin, H.-H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    40
  • Issue
    3
  • fYear
    2004
  • Firstpage
    177
  • Lastpage
    179
  • Abstract
    A highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 μm pulsed operation with a low threshold current density of 300 A/cm2. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.
  • Keywords
    Auger effect; III-V semiconductors; current density; gallium arsenide; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; spontaneous emission; 1.292 micron; 1.3 micron; Auger recombination component; GaAs (100) substrate; GaAs-GaAsSb; GaAs-GaAsSb quantum well laser; GaAs/GaAs0.64Sb0.36; low threshold current density; solid source molecular beam epitaxy; spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040119
  • Filename
    1267535
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898382