Title :
200 nm gated field emitters
Author :
Huang, Z. ; McGruer, N.E. ; Warner, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
The fabrication and electrical characteristics of 200-nm chromium-gated silicon field emitters are reported. These gated emitters are the smallest yet reported. A turn-on voltage of approximately 35 V represents a sublinear scaling of device operating voltage with device size. Emitter failures appear to be very similar to failures of 2- mu m devices produced using the same process.<>
Keywords :
chromium; electron field emission; elemental semiconductors; silicon; sputter etching; vacuum microelectronics; 200 nm; 35 V; Cr-Si; electrical characteristics; fabrication; gated field emitters; turn-on voltage; Chromium; Current density; Electric variables; Etching; Fabrication; Ionization; Silicon; Sputtering; Testing; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
