DocumentCode :
898420
Title :
Protective device for MOS integrated circuits
Author :
Iyer, R.R.
Volume :
56
Issue :
7
fYear :
1968
fDate :
7/1/1968 12:00:00 AM
Firstpage :
1223
Lastpage :
1224
Abstract :
Two protective devices for MOS integrated circuits have been extensively tested and proved feasible. They also perform more reliably than conventional Zener diodes. One of them has been used in the fabrication of a dual 25-bit MOS and MNOS integrated shift register and performed reliably.
Keywords :
Detectors; Dielectric substrates; Leakage current; MOS integrated circuits; Noise generators; Noise measurement; Power measurement; Power system modeling; Protection; Temperature;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6529
Filename :
1448459
Link To Document :
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