GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current

Author

Martinez, Marino J. ; Schuermeyer, Fritz L. ; Stutz, C. Edward

Author_Institution

Wright Lab., Wright-Patterson AFB, OH, USA

Volume

14

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

126

Lastpage

128

Abstract

The first known p-channel GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As HFETs on InP are reported. The devices, using a strained-layer GaAs/sub x/Sb/sub 1-x/ channel, have achieved extrinsic transconductances of 40 mS/mm and intrinsic transconductances of 100 mS/mm. In addition to high transconductance, the devices exhibit excellent pinchoff and demonstrate a record gate turn-on voltage of -3 V as a result of extremely low gate leakage currents, making them exceptional candidates for complementary technologies. These outstanding gate characteristics are attributed to the valence band-edge discontinuity of 0.64 eV.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; -3 V; 100 mS; 40 mS; GaAsSb-InAlAs-InP; HFETs; InP; gate characteristics; gate leakage current; gate turn-on voltage; heterostructure FET; p-channel; pinchoff; strained-layer GaAs/sub x/Sb/sub 1-x/ channel; transconductance; valence band-edge discontinuity; Electron mobility; FETs; Gallium arsenide; HEMTs; Indium phosphide; Lattices; Leakage current; MODFETs; Solid state circuits; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215133

Filename

215133