DocumentCode
898499
Title
A Gunn diode operated in the hybrid mode
Author
Ho-Chung Huang ; Mackenzie, L.A.
Volume
56
Issue
7
fYear
1968
fDate
7/1/1968 12:00:00 AM
Firstpage
1232
Lastpage
1233
Abstract
A new mode of operation of Gunn devices is reported. The theoretical model is described from which the efficiency and negative RF conductance are calculated. Theoretical results show that this "hybrid mode" has broad-band characteristics and insensitivity to load. Good agreement between theory and experiment indicates the existence of this mode.
Keywords
Circuits; Diodes; Doping; Gallium arsenide; Gunn devices; Radio frequency; Space charge; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6537
Filename
1448467
Link To Document