Title :
A Gunn diode operated in the hybrid mode
Author :
Ho-Chung Huang ; Mackenzie, L.A.
fDate :
7/1/1968 12:00:00 AM
Abstract :
A new mode of operation of Gunn devices is reported. The theoretical model is described from which the efficiency and negative RF conductance are calculated. Theoretical results show that this "hybrid mode" has broad-band characteristics and insensitivity to load. Good agreement between theory and experiment indicates the existence of this mode.
Keywords :
Circuits; Diodes; Doping; Gallium arsenide; Gunn devices; Radio frequency; Space charge; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6537
