Clear negative characteristics observed in coupled-quantum-well base resonant tunneling transistors

Author

Waho, Takao ; Maezawa, Koichi ; Mizutani, Takashi

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

14

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

202

Lastpage

204

Abstract

Clear negative resistance characteristics observed in a resonant tunneling transistor with a coupled-quantum-well (CQW) base are reported. The collector current reveals negative resistance properties with respect not only to the base-emitter voltage but also the base current in the common-emitter configuration. The collector current peak-to-valley ratio is enhanced in the CQW-base transistor compared with a reference transistor with a single-quantum-well (SQW) base.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; negative resistance; resonant tunnelling devices; semiconductor quantum wells; Al/sub 0.1/Ga/sub 0.9/As-GaAs; HBT process; base current; base-emitter voltage; collector current; common-emitter configuration; coupled-quantum-well base; negative resistance characteristics; peak-to-valley ratio; resonant tunneling transistor; Contact resistance; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Ohmic contacts; Quantum well devices; Quantum wells; Resonant tunneling devices; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215150

Filename

215150