Title :
Clear negative characteristics observed in coupled-quantum-well base resonant tunneling transistors
Author :
Waho, Takao ; Maezawa, Koichi ; Mizutani, Takashi
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
Clear negative resistance characteristics observed in a resonant tunneling transistor with a coupled-quantum-well (CQW) base are reported. The collector current reveals negative resistance properties with respect not only to the base-emitter voltage but also the base current in the common-emitter configuration. The collector current peak-to-valley ratio is enhanced in the CQW-base transistor compared with a reference transistor with a single-quantum-well (SQW) base.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; negative resistance; resonant tunnelling devices; semiconductor quantum wells; Al/sub 0.1/Ga/sub 0.9/As-GaAs; HBT process; base current; base-emitter voltage; collector current; common-emitter configuration; coupled-quantum-well base; negative resistance characteristics; peak-to-valley ratio; resonant tunneling transistor; Contact resistance; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Ohmic contacts; Quantum well devices; Quantum wells; Resonant tunneling devices; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
