Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors

Author

Xiao, X. ; Sturm, James C. ; Parihar, S.R. ; Lyon, S.A. ; Meyerhofer, D. ; Palfrey, Stephen ; Shallcross, F.V.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

14

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

199

Lastpage

201

Abstract

By employing a thin silicon sacrificial cap layer for silicide formation, the authors successfully demonstrated Pd/sub 2/Si/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with Si/sub 1-x/Ge/sub x/ alloy. The Schottky barrier height of the silicide/strained Si/sub 1-x/Ge/sub x/ detector decreases with increasing Ge fraction, allowing for tuning of the detector´s cutoff wavelength. The cutoff wavelength was extended beyond 8 mu m in PtSi/Si/sub 0.85/Ge/sub 0.15/ detectors. It is shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.<>

Keywords

Ge-Si alloys; Schottky-barrier diodes; infrared detectors; palladium compounds; photodiodes; platinum compounds; semiconductor materials; 2 to 8 micron; IR photoresponse; Pd/sub 2/-Si-Si/sub 1-x/Ge/sub x/; PtSi-Si/sub 0.85/Ge/sub 0.15/; Schottky barrier height; Schottky-barrier infrared detectors; extended cutoff wavelengths; high quantum efficiency; near-ideal dark current; rapid thermal CVD; sacrificial cap layer; silicide formation; strained layer; Dark current; Infrared detectors; Infrared imaging; Palladium; Photoelectricity; Platinum; Schottky barriers; Sensor arrays; Silicides; Silicon alloys;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215151

Filename

215151