Title :
High-power V-band AlInAs/GaInAs on InP HEMTs
Author :
Matloubian, Mehran ; Brown, April S. ; Nguyen, Loi D. ; Melendes, Melissa A. ; Larson, Lawrence E. ; Delancey, M.J. ; Pence, John E. ; Rhodes, Richard A. ; Thompson, Mark A. ; Henige, Joseph A.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
The DC and RF performance of delta -doped channel AlInAs/GaInAs on InP power high-electron-mobility transistors (HEMTs) are reported. A 450- mu m-wide device with a gate-length of 0.22 mu m has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMTs for high-power applications in addition to low-noise applications at V-band.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.22 micron; 150 mW; 17 percent; 20 percent; 200 mW; 57 GHz; AlInAs-GaInAs-InP; DC performance; InP; RF performance; V-band power HEMT; gate-length; high-electron-mobility transistors; high-power applications; low-noise applications; output power; power-added efficiency; saturated output power; Electrons; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Power generation; Schottky barriers; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
