Title :
X-band power AlGaAsInGaAs P-n-p HBTs
Author :
Hill, Darrell G. ; Kim, Tae Seung ; Tserng, Hua Quen
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
AlGaAs/InGaAs P-n-p heterojunction bipolar transistors (HBTs) were fabricated using carbon-doped material grown by nonarsine metal-organic vapor-phase epitaxy (MOVPE). F/sub max/ of 39 GHz and f/sub t/ of 18 GHz were obtained. Operated in common-base mode, a P-n-p HBT achieved 0.5-W output power with 8-dB gain at 10 GHz; saturated output power was 0.69 W. Results are presented for devices with emitter lengths from 120 to 600 mu m.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 0.5 W; 0.69 W; 10 GHz; 120 to 600 micron; 18 GHz; 39 GHz; 8 dB; AlGaAs:C-InGaAs; MOVPE; X-band; common-base mode; cutoff frequency; emitter lengths; heterojunction bipolar transistors; maximum frequency of oscillation; power P-n-p HBT; saturated output power; small signal characteristics; Alloying; Circuits; Contact resistance; Epitaxial layers; Gallium arsenide; Gold; Heterojunction bipolar transistors; Power generation; Schottky diodes; Voltage;
Journal_Title :
Electron Device Letters, IEEE
