Two-dimensional electron gas (2-DEG) interaction in a double-heterostructure selectively contacted field-effect transistor

Author

Khanna, Ravi ; Das, Mukunda B.

Author_Institution

Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

14

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

182

Lastpage

184

Abstract

Experimental results concerning the interaction between two two-dimensional electron gases (2-DEGs) in a single-quantum-well AlGaAs/GaAs/AlGaAs heterostructure field-effect transistor are presented. The results of magneto-transconductance measurements clearly delineate the behavior of low-field carrier mobilities in the two 2-DEG systems. The drain current/voltage characteristics clearly demonstrate that at 300 K the two 2-DEG systems interact, and at 77 K there is negligible interaction between the two 2-DEG systems under low-field conditions of operation.<>

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; magnetoresistance; two-dimensional electron gas; 2DEG interaction; AlGaAs-GaAs-AlGaAs; GaAs substrate; MODFET; SQW HFET; current/voltage characteristics; double-heterostructure selectively contacted field-effect transistor; low-field carrier mobilities; magneto-transconductance; two-dimensional electron gases; Conductivity; Electrodes; Electrons; Etching; FETs; Fabrication; HEMTs; MODFETs; Metallization; Ohmic contacts;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215157

Filename

215157