Title :
MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxides
Author :
Yoon, G.W. ; Joshi, A.B. ; Kim, J. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
The technique of NH/sub 3/ nitridation of N/sub 2/O oxides is proposed and demonstrated for increasing nitrogen concentration in N/sub 2/O oxides so as to improve the resistance to boron penetration, without any adverse effects on electrical and reliability properties. Results show that NH/sub 3/-nitrided N/sub 2/O oxides exhibit excellent electrical (low fixed charge) and reliability (smaller charge trapping and suppressed interface state generation) properties, with an additional advantage of significantly improved resistance to boron generation. This technique may have a great impact on deep-submicrometer dual-gate CMOS technology.<>
Keywords :
dielectric thin films; interface electron states; metal-insulator-semiconductor devices; nitridation; oxidation; reliability; B penetration resistance; MOS capacitors; MOS characteristics; N/sub 2/O oxides; NH/sub 3/ nitridation; ROXNOX; Si-SiO/sub 2/; Si-SiO/sub x/N/sub y/; charge trapping; deep-submicrometer dual-gate CMOS technology; electrical properties; gate dielectrics; interface state generation; low fixed charge; reliability; Boron; CMOS technology; Dielectrics; Electric resistance; Electron traps; Hot carriers; Interface states; MOS capacitors; MOSFET circuits; Nitrogen;
Journal_Title :
Electron Device Letters, IEEE
