Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor

Author

Liu, William ; Fan, Shou-Kong ; Henderson, Timothy ; Davito, Dave

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

14

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

176

Lastpage

178

Abstract

The microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor (HBT) is presented. At an operating current density of 2.08*10/sup 4/ A/cm/sup 2/, the measured cutoff frequency is 50 GHz and the maximum oscillation frequency extrapolated from measured unilateral gain and the maximum available gain are 116 and 81 GHz, respectively, all using 20-dB/decade slopes. These results are compared with other reported high-frequency performances of GaInP HBTs. In addition, these results are compared with AlGaAs/GaAs HBTs having a similar device structure.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 116 GHz; 50 GHz; 81 GHz; GaInP-GaAs; cutoff frequency; heterojunction bipolar transistor; maximum available gain; maximum oscillation frequency; microwave performance; self-aligned HBT; unilateral gain; Current density; Current measurement; Cutoff frequency; Doping; Frequency measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Instruments; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215159

Filename

215159