Title :
High/f/sub max/ collector-up AlGaAs/GaAs heterojunction bipolar transistors with a heavily carbon-doped base fabricated using oxygen-ion implantation
Author :
Yamahata, Shoji ; Matsuoka, Yutaka ; Ishibashi, Tadao
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
AlGaAs/GaAs collector-up heterojunction bipolar transistors (HBTs) with a heavily carbon-doped base layer were fabricated using oxygen-ion implantation and zinc diffusion. The high resistivity of the oxygen-ion-implanted AlGaAs layer in the external emitter region effectively suppressed electron injection from the emitter, allowing collector current densities to reach values above 10/sup 5/ A/cm/sup 2/. For a transistor with a 2- mu m*10- mu m collector, f/sub T/ was 70 GHz and f/sub max/ was as high as 128 GHz. It was demonstrated by on-wafer measurements that the first power performance of collector-up HBTs resulted in a maximum power-added efficiency of as high as 63.4% at 3 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; ion implantation; solid-state microwave devices; 128 GHz; 3 GHz; 63.4 percent; 70 GHz; AlGaAs:C,O-GaAs; HBTs; collector current densities; collector-up heterojunction bipolar transistors; cutoff frequency; external emitter region; heavily doped base layer; ion implantation; maximum frequency of oscillation; maximum power-added efficiency; on-wafer measurements; power performance; Buffer layers; Conductivity; Current density; Electron emission; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Zinc;
Journal_Title :
Electron Device Letters, IEEE
