Title :
Planar-doped n-type InAlAs/InGaAs MODFETs on InP
Author :
Li, X. ; Wang, W.I. ; Cho, A.Y. ; Sivco, D.L.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
N-type doping of silicon in InAlAs/InGaAs/InP modulation-doped field effect transistor (MODFET) structures grown by molecular beam epitaxy (MBE) for the
Keywords :
III-V semiconductors; aluminium compounds; carrier density; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; 1.2 micron; 400 mS/mm; 77 K; InAlAs:Si-InGaAs-InP; InP substrates; MBE; electron mobility; extrinsic transconductance; gate length; maximum drain current; molecular beam epitaxy; p-n multi layer structures; planar doped n-type MODFET; sheet carrier concentration; Doping; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
