Title :
Anomalous voltage overshoot during turn-off of thin-film n-channel SOI MOSFETs
Author :
Dubois, E. ; Shahidi, Ghavam G. ; Scheuermann, Michael R.
fDate :
4/1/1993 12:00:00 AM
Abstract :
An anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator SOI n-MOSFETs is reported. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over a subnanosecond time scale, the charge dynamics related to the bipolar action are essential to explain this voltage overshoot.<>
Keywords :
SIMOX; impact ionisation; insulated gate field effect transistors; semiconductor device models; thin film transistors; transient response; CMOS technology; I-V characteristics; SIMOX wafer; anomalous output voltage overshoot; charge dynamics; impact ionization; model; parasitic floating-base bipolar device; switching; thin film n-channel SOI MOSFET; transient delay response; turn-off; CMOS technology; Charge carrier processes; Coaxial cables; MOSFET circuits; Power system transients; Semiconductor thin films; Silicon on insulator technology; Transistors; Transmission line theory; Voltage;
Journal_Title :
Electron Device Letters, IEEE
