On the electrical conduction in the interpolysilicon dielectric layers

Author

Cobianu, Cornel ; Popa, Ovidiu ; Dascalu, Dan

Author_Institution

Center of Microtechnol., Bucharest, Romania

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

213

Lastpage

215

Abstract

To reduce the low-field electrical conductivity of interpolysilicon dielectrics used in electrically erasable programmable read-only (EEPROM) memories devices, the roughness of the poly-SiO/sub 2/ interface until now has been decreased in two ways: (1) by increasing the temperature of oxidation and doping of polysilicon combined with low-pressure chemical vapor deposition (LPCVD) of silicon (undoped or in-situ doped) in the amorphous phase, or (2) by the use of LPCVD high-temperature oxide (HTO) deposited over polycrystalline silicon. The advantages of both methods are combined, and electrical conduction results for an interpoly structure based on LPCVD smooth surface polysilicon and LPCVD HTO SiO/sub 2/ are presented. The data are interpreted in terms of the Fowler-Nordheim mechanism.<>

Keywords

chemical vapour deposition; dielectric thin films; electronic conduction in insulating thin films; oxidation; semiconductor doping; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; EEPROM; Fowler-Nordheim mechanism; LPCVD high-temperature oxide; Si-SiO/sub 2/ interface roughness; electrical conduction; interpolysilicon dielectric layers; low-field electrical conductivity; low-pressure chemical vapor deposition; oxidation temperature; polysilicon doping; Amorphous materials; Chemical vapor deposition; Dielectric devices; Doping; EPROM; Rough surfaces; Silicon; Surface roughness; Temperature; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215171

Filename

215171