A load-pull technique for the determination of transistor S parameters under large-signal conditions

Author

Osborne, M.A. ; Morgan, G.B.

Author_Institution

University of Wales Institute of Science & Technology, Department of Physics, Electronics & Electrical Engineering, Cardiff, UK

Volume

132

Issue

7

fYear

1985

fDate

12/1/1985 12:00:00 AM

Firstpage

419

Lastpage

423

Abstract

A novel method is presented for determining the large single S parameters of transistors under drive conditions using data obtained from load-pull measurements. The technique uses a load which can have a variable amplitude and phase, and can thus control the amplitude and phase of the signal at the device output. A mathematical analysis of the method is presented and typical results for the large-signal S parameters of an X-band FET are given. The gain compression and AM/PM conversion limits of a linearised power amplifier are then calculated.

Keywords

S-parameters; field effect transistors; microwave measurement; network analysis; power transistors; semiconductor device testing; solid-state microwave devices; AM/PM conversion; MESFET; X-band FET; amplitude; drive conditions; gain compression; large-signal conditions; linearised lower amplifier; load-pull technique; mathematical analysis; microwave power transistors; phase; transistor S parameters;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings H

Publisher

iet

ISSN

0950-107X

Type

jour

DOI

10.1049/ip-h-2.1985.0075

Filename

4642852