Title :
A load-pull technique for the determination of transistor S parameters under large-signal conditions
Author :
Osborne, M.A. ; Morgan, G.B.
Author_Institution :
University of Wales Institute of Science & Technology, Department of Physics, Electronics & Electrical Engineering, Cardiff, UK
fDate :
12/1/1985 12:00:00 AM
Abstract :
A novel method is presented for determining the large single S parameters of transistors under drive conditions using data obtained from load-pull measurements. The technique uses a load which can have a variable amplitude and phase, and can thus control the amplitude and phase of the signal at the device output. A mathematical analysis of the method is presented and typical results for the large-signal S parameters of an X-band FET are given. The gain compression and AM/PM conversion limits of a linearised power amplifier are then calculated.
Keywords :
S-parameters; field effect transistors; microwave measurement; network analysis; power transistors; semiconductor device testing; solid-state microwave devices; AM/PM conversion; MESFET; X-band FET; amplitude; drive conditions; gain compression; large-signal conditions; linearised lower amplifier; load-pull technique; mathematical analysis; microwave power transistors; phase; transistor S parameters;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H
DOI :
10.1049/ip-h-2.1985.0075
